CHE1260 rohs compliant ref : dsCHE12600197 - 16 jul 10 1/10 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 10-27ghz bidirectionnal detector gaas monolithic microwave ic description the CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. it allows the measurement of transmitted and reflected power. it is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. the circuit is manufactured with a schottky diode mmic process, 1m gate length, via holes through the substrate and air bridges. it is available in chip form. main features wide frequency range 10-27ghz bidirectionnal detection 30db dynamic range esd protected chip size: 1.41x1.41x0.1mm bcb layer protection main characteristics tamb = +25c, vdc = +4.5v (on dc_i and dc_r) symbol parameter min typ max unit f frequency range 10 27 ghz il insertion loss 0.8 db dr dynamic range 20 db esd protection: electrostatic discharge sensitive d evice. observe handling precautions! vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i 10ghz 17ghz 24ghz 27ghz 20 5000
CHE1260 10-27ghz detector ref. : dsCHE12600197 - 16 jul 10 2/10 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 electrical characteristics tamb = +25c, vdc = +4.5v (on dc_i and dc_r) symbol parameter min typ max unit f frequency range 10 27 ghz il insertion loss 0.8 db cd coupler directivity 13 db dr dynamic range : 10 - 12ghz 12 - 24ghz 24 - 27ghz 22 20 15 db db db pd power detection: 10 - 17ghz 17 - 21ghz 21 - 24ghz 24 - 27ghz -1 -3 -6 -8 dbm dbm dbm dbm vdetect_i voltage detection from transmitted power vref_r C vdet_i from pd_min to pd_max 20 3500 mv vdetect_r voltage detection from reflected power vref_i C vdet_r from pd_min to pd_max 20 3500 mv rlin input return loss -11 -8 db rlout output return loss -11 -8 db vdc bias voltage 4.5 v idc bias current (on ports dc_i or dc_r) 25 33 45 m a these values are representative of on-wafer measure ments that are made without bonding wires at the rf ports but with 100k w resistor in parallel on pads vdet_i, vref_i, vdet_ r and vref_r (see notes). absolute maximum ratings (1) tamb = +25c symbol parameter values unit vdc bias voltage (on ports dc_i and dc_r) 6 v top operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c p_max maximum power (for transmitted and/or reflect ed power) 30 dbm (1) operation of this device above anyone of these paramaters may cause permanent damage.
10-27ghz detector CHE1260 ref: dsCHE12600197 - 16 jul 10 3/10 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on-wafer sij parameters tamb = +25c, vdc = +4.5v (on dc_i and dc_r), 100k w resistor in parallel on pads vdet_i, vref_i, vdet_r and vref_r (see notes, page 8). freq (ghz) db(s11) ph(s11) () db(s12) ph(s12) () db(s2 1) ph(s21) () db(s22) ph(s22) () 2 -32.9 54 -0.1 -13 -0.1 -13 -32.5 53 3 -30.0 52 -0.1 -20 -0.1 -20 -29.8 50 4 -27.7 50 -0.1 -27 -0.1 -27 -27.7 49 5 -25.8 47 -0.1 -33 -0.1 -33 -25.9 45 6 -24.1 42 -0.2 -40 -0.2 -40 -24.1 40 7 -22.6 36 -0.2 -46 -0.2 -46 -22.6 34 8 -21.3 31 -0.2 -53 -0.2 -53 -21.2 28 9 -20.0 25 -0.2 -60 -0.2 -60 -20.0 22 10 -18.8 19 -0.3 -66 -0.2 -66 -18.8 17 11 -17.7 13 -0.3 -73 -0.3 -73 -17.7 10 12 -16.6 6 -0.3 -79 -0.3 -79 -16.6 4 13 -15.0 1 -0.4 -86 -0.4 -86 -15.0 -1 14 -14.2 -6 -0.4 -93 -0.4 -93 -14.3 -8 15 -13.6 -13 -0.5 -99 -0.5 -99 -13.5 -14 16 -12.9 -19 -0.5 -106 -0.5 -106 -12.8 -21 17 -12.3 -26 -0.5 -113 -0.5 -113 -12.2 -28 18 -11.8 -33 -0.6 -119 -0.6 -119 -11.8 -34 19 -11.4 -40 -0.6 -126 -0.6 -126 -11.3 -40 20 -11.0 -46 -0.7 -132 -0.7 -132 -11.0 -46 21 -10.7 -53 -0.7 -139 -0.7 -139 -10.6 -53 22 -10.5 -59 -0.8 -146 -0.8 -146 -10.4 -60 23 -10.4 -67 -0.8 -152 -0.8 -152 -10.2 -67 24 -10.8 -74 -0.9 -158 -0.9 -158 -10.5 -74 25 -10.9 -76 -0.9 -165 -0.9 -165 -10.8 -76 26 -10.7 -81 -0.9 -172 -0.9 -172 -10.8 -80 27 -11.0 -86 -0.9 -179 -0.9 -179 -10.8 -84 28 -11.1 -90 -1.0 175 -1.0 175 -11.0 -89 29 -11.4 -95 -1.0 168 -0.9 168 -11.2 -93 30 -11.9 -100 -1.0 161 -1.0 161 -11.7 -97 31 -12.5 -104 -1.0 154 -1.0 154 -12.3 -101 32 -13.3 -108 -1.0 147 -1.0 147 -13.0 -103 33 -14.4 -108 -1.1 140 -1.1 140 -13.7 -105 34 -15.1 -104 -1.1 133 -1.1 133 -14.9 -103 35 -16.9 -108 -1.1 125 -1.1 125 -16.3 -104 36 -19.0 -99 -1.1 118 -1.1 118 -18.0 -92 37 -20.3 -79 -1.1 110 -1.1 110 -19.0 -74 38 -20.8 -51 -1.1 102 -1.1 102 -18.9 -51 39 -15.1 -34 -1.3 93 -1.3 93 -14.7 -38 40 -12.5 -33 -1.5 84 -1.5 84 -12.1 -36 41 -10.2 -37 -1.7 76 -1.7 76 -9.9 -37 42 -8.3 -41 -2.1 67 -2.0 67 -8.2 -42 43 -6.9 -47 -2.4 59 -2.4 59 -6.7 -47 44 -5.7 -53 -2.8 51 -2.8 51 -5.6 -52 45 -4.7 -59 -3.3 43 -3.3 43 -4.6 -57
CHE1260 10-27ghz detector ref. : dsCHE12600197 - 16 jul 10 4/10 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performance on-wafer measurements (without bonding wires at rf ports). tamb = +25c, vdc = +4.5v (on dc_i and dc_r), 100k w resistor in parallel on pads vdet_i, vref_i, vdet_r and vref_r (see notes, page 8). insertion losses versus frequency input and output return losses versus frequency rlin rlout
10-27ghz detector CHE1260 ref: dsCHE12600197 - 16 jul 10 5/10 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 incident power detection versus incident power @ di fferent frequencies (vdetect_i) the CHE1260-98f is a bidirectionnal detector using a symmetrical bidirectionnal coupler. therefore the incident power detection versus incid ent power is identical to the reflective power detection versus reflected power. the reflective power detection versus incident powe r depends on both the coupler directivity and the reflective environment of the chip. 10ghz 17ghz 24ghz 27ghz 20 5000
CHE1260 10-27ghz detector ref. : dsCHE12600197 - 16 jul 10 6/10 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 incident and reflected power detection versus incid ent power @ 10ghz (vdetect_i & vdetect_r) incident and reflected power detection versus incid ent power @ 17ghz (vdetect_i & vdetect_r) incident reflective incident reflective 20 5000 20 5000
10-27ghz detector CHE1260 ref: dsCHE12600197 - 16 jul 10 7/10 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 incident and reflected power detection versus incid ent power @ 24ghz (vdetect_i & vdetect_r) incident and reflected power detection versus incid ent power @ 27ghz (vdetect_i & vdetect_r) incident reflective incident reflective 20 5000 20 5000
CHE1260 10-27ghz detector ref. : dsCHE12600197 - 16 jul 10 8/10 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 chip assembly and mechanical data: dc pads size: 100/100 m, chip thickness: 100 m note: supply feed might be capacitively bypassed. 2 5 m m diameter gold wire is to be prefered.
10-27ghz detector CHE1260 ref: dsCHE12600197 - 16 jul 10 9/10 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 notes vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i vdet_i rf_in rf_out vref_i vdet_r vref_r dc_i 100k w ww w 100k w ww w 100k w ww w 100k w ww w vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i vdet_i rf_in rf_out vref_i vdet_r vref_r dc_i 100k w ww w 100k w ww w 100k w ww w 100k w ww w recommended external resistors assembly 100k w resistors in parallel with vdet_i, vref_i, vdet_r and vref_r pads are recommended to provide the best behaviour in the whole operatin g temperature range. best accuracy is obtained when: vdetect_ i= vref_r C vdet_i vdetect_r= vref_i C vdet_r as the voltage detection is the difference between vref_x and vdet_x (x= i or r), the external resistor value should be identical on thes e ports. for information, a variation of 2% leads around 1mv variation of detected voltage. esd protections are implemented on vdet_i, vref_i, vdet_r and vref_r accesses. due to the bcb coating on the chip, qualification d omain implies the chip must be glued.
CHE1260 10-27ghz detector ref. : dsCHE12600197 - 16 jul 10 10/10 specificatio ns subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 ordering information chip form: CHE1260-98f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s
|
